1 CMPA801B025D 25 w, 8.0 - 11.0 ghz, gan mmic, power amplifer crees cmp801b025d is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic). gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to si and gaas transistors. this mmic contains a two-stage reactively matched amplifer design approach enabling very wide bandwidths to be achieved. rev 1.0 C june 2014 typical performance over 8.0-11.0 ghz (t c = 25?c) parameter 8.0 ghz 9.0 ghz 10.0 ghz 11.0 ghz units small signal gain 30 28 27 29 db p out @ p in = 25 dbm 32 41 34 47 w power gain @ p in = 25 dbm 20 21 20 21 db pae @ p in = 25 dbm 41 44 37 41 % features ? 28 db small signal gain ? 35 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? size 0.142 x 0.188 x 0.004 inches applications ? point to point radio ? communications ? test instrumentation ? emc amplifers subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units conditions drain-source voltage v dss 84 v dc 25?c gate-source voltage v gs -10, +2 v dc 25?c storage temperature t stg -55, +150 ?c operating junction temperature t j 225 ?c thermal resistance, junction to case (packaged) 1 r jc 1.22 ?c/w pulse width = 100 s, duty cycle = 10%, p diss = 77 w thermal resistance, junction to case (packaged) 1 r jc 1.80 ?c/w cw, 85?c, p diss = 77 w mounting temperature (30 seconds) t s 320 ?c p diss = 77 w note 1 eutectic die attach using 80/20 ausn solder mounted to a 40 mil thick cpc carrier. electrical characteristics (frequency = 8.0 ghz to 11.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v v ds = 10 v, i d = 13.2 ma gate quiescent voltage v gs(q) C -2.7 C v v dd = 28 v, i dq = 1200 ma saturated drain current 1 i ds 9.2 12.9 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 13.2 ma rf characteristics 2 small signal gain s21 C 28 C db v dd = 28 v, i dq = 1200 ma power output p out1 22.5 40 C w v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 8 ghz power output p out1 28.0 40 C w v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 10 ghz power output p out1 27.5 40 C w v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 11 ghz power added effciency pae 30 45 C % v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 8 ghz power added effciency pae 32 45 C % v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 10 ghz power added effciency pae 30 45 C % v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 11 ghz power gain g p 19.75 20 C db v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 8 ghz power gain g p 19.55 20 C db v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 10 ghz power gain g p 22.40 20 C db v dd = 28 v, i dq = 1200 ma, p in = 25 dbm, freq = 11 ghz input return loss s11 C 5 C db v dd = 28 v, i dq = 1200 ma output return loss s22 C 12 C db v dd = 28 v, i dq = 1200 ma output mismatch stress vswr C 5 : 1 C y no damage at all phase angles, v dd = 28 v, i dq = 1200 ma, p out = 25w cw notes: 1 scaled from pcm data. 2 all data pulse tested on-wafer with pulse width = 10 s, duty cycle = 0.1%. CMPA801B025D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 die dimensions (units in microns) overall die size 4780 x 3610 (+0/-50) microns, die thickness 100 (+/-10) micron. all gate and drain pads must be wire bonded for electrical connection. pad number function description pad size (microns) note 1 rf-in rf-input pad. matched to 50 ohm. 150 x 150 4 2 vg1_a gate control for stage 1. v g ~ 2.0 - 3.5 v. 100 x 100 1,2 3 vg1_b gate control for stage 1. v g ~ 2.0 - 3.5 v. 100 x 100 1,2 4 vd1_a drain supply for stage 1. v d = 28 v. 100 x 100 1 5 vd1_b drain supply for stage 1. v d = 28 v. 100 x 100 1 6 vg2_a gate control for stage 2a. v g ~ 2.0 - 3.5 v. 100 x 100 1,3 7 vg2_b gate control for stage 2a. v g ~ 2.0 - 3.5 v. 100 x 100 1,3 8 vd2_a drain supply for stage 2a. v d = 28 v. C 1 9 vd2_b drain supply for stage 2b. v d = 28 v. C 1 10 rf-out rf-output pad. matched to 50 ohm. 150 x 150 4 notes: 1 attach bypass capacitor to pads 2-9 per application circuit. 2 vg1_a and vg1_b are connected internally so it would be enough to connect either one for proper operation. 3 vg2_a and vg2_b are connected internally so it would be enough to connect either one for proper operation. 4 the rf input and output pad have a ground-signal-ground with a nominal pitch of 1 mil (25 um). the rf ground pads are 100 x 200 microns. die assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at http://www.cree.com/products/wireless_appnotes.asp ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? use the die label (xx-yy) for correct orientation. CMPA801B025D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 block diagram showing additional capacitors for operation over 8.0 to 11.0 ghz designator description quantity c1,c2,c3,c4,c5,c6,c7,c8 cap, 51pf, +/-10%, single layer, 0.035, er 3300, 100v, ni/ au termination 8 c9,c10,c11,c12 cap, 680pf, +/-10%, single layer, 0.070, er 3300, 100v, ni/au termination 4 notes: 1 the input, output and decoupling capacitors should be attached as close as possible to the die- typical distance is 5 to 10 mils with a maximum of 15 mils. 2 the mmic die and capacitors should be connected with 2 mil gold bond wires. 1 2 12 c8 c6 c7 c5 c12 c11 c10 c1 c2 c3 c4 c9 rf_in rf_out vg vd vg1_b vd1_b vg2_b vd2_b vg1_a vd1_a vg2_a vd2_a CMPA801B025D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 typical performance of the CMPA801B025D small signal gain output power & pae vs frequency vs frequency v dd = 28 v, i dq = 1.2 a v dd = 28 v, i dq = 1.2 a, p in = 25 dbm associated gain vs frequency v dd = 28 v, i dq = 1.2 a, p in = 25 dbm 20 40 20 40 s1 1 ( d b ) , s22 ( d b ) s21 ( d b ) CMPA801B025D small signal response, v dd =28v, i dq =1.2a -40 -20 0 -40 -20 0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s1 1 ( d b ) , s22 ( d b ) s21 ( d b ) frequency (ghz) s21 s11 s22 20 25 30 a sso ci ated gai n ( d b ) CMPA801B025D associated gain vs. frequency v dd =28v, i dq =1.2a, pin=25dbm 0 5 10 15 7.0 8.0 9.0 10.0 11.0 12.0 13.0 a sso ci ated gai n ( d b ) frequency (ghz) 50 60 ou t p u t po w er ( d b m) , po w er a d d ed ef f i ci en cy ( % ) CMPA801B025D output power and power added efficiency vs. frequency v dd =28v, i dq =1.2a, pin=25dbm 20 30 40 7.0 8.0 9.0 10.0 11.0 12.0 13.0 ou t p u t po w er ( d b m) , po w er a d d ed ef f i ci en cy ( % ) frequency (ghz) pout pae pae p out CMPA801B025D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 part number system parameter value units lower frequency 8.0 ghz upper frequency 1 11.0 ghz power output 25 w package bare die - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line CMPA801B025D CMPA801B025D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/wireless sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.313.5639 CMPA801B025D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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